JPH0578190B2 - - Google Patents

Info

Publication number
JPH0578190B2
JPH0578190B2 JP58053076A JP5307683A JPH0578190B2 JP H0578190 B2 JPH0578190 B2 JP H0578190B2 JP 58053076 A JP58053076 A JP 58053076A JP 5307683 A JP5307683 A JP 5307683A JP H0578190 B2 JPH0578190 B2 JP H0578190B2
Authority
JP
Japan
Prior art keywords
mos
bipolar
array
transistors
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58053076A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59177944A (ja
Inventor
Hideo Maejima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58053076A priority Critical patent/JPS59177944A/ja
Publication of JPS59177944A publication Critical patent/JPS59177944A/ja
Publication of JPH0578190B2 publication Critical patent/JPH0578190B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/996—Masterslice integrated circuits using combined field effect technology and bipolar technology

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Logic Circuits (AREA)
JP58053076A 1983-03-28 1983-03-28 半導体集積回路装置 Granted JPS59177944A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58053076A JPS59177944A (ja) 1983-03-28 1983-03-28 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58053076A JPS59177944A (ja) 1983-03-28 1983-03-28 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS59177944A JPS59177944A (ja) 1984-10-08
JPH0578190B2 true JPH0578190B2 (en]) 1993-10-28

Family

ID=12932710

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58053076A Granted JPS59177944A (ja) 1983-03-28 1983-03-28 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS59177944A (en])

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6035532A (ja) * 1983-07-29 1985-02-23 Fujitsu Ltd マスタスライス集積回路装置
JPS62189739A (ja) * 1986-02-17 1987-08-19 Hitachi Ltd 半導体集積回路装置
JPS62281443A (ja) * 1986-05-30 1987-12-07 Hitachi Ltd 半導体集積回路装置
JPS63114418A (ja) * 1986-10-31 1988-05-19 Hitachi Ltd 半導体集積回路装置
US4851893A (en) * 1987-11-19 1989-07-25 Exar Corporation Programmable active/passive cell structure
JPH0831581B2 (ja) * 1988-02-19 1996-03-27 株式会社東芝 半導体装置
JP2978501B2 (ja) * 1988-12-23 1999-11-15 日本電気株式会社 論理回路
JP2632420B2 (ja) * 1989-02-23 1997-07-23 三菱電機株式会社 半導体集積回路
JP2501930B2 (ja) * 1990-02-26 1996-05-29 株式会社東芝 半導体集積回路

Also Published As

Publication number Publication date
JPS59177944A (ja) 1984-10-08

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